Population-inversion and gain estimates for a semiconductor TASER
نویسنده
چکیده
We have investigated a solid–state design advanced (Soref et al. SPIE Proceedings, vol. 3795, 516 (1999)) to achieve Terahertz-Amplification-by-the-Stimulated-Emission-of-Radiation (TASER). The original design was based on lightto heavy-hole intersubband transitions in SiGe/Si heterostructures. This work adapts the design to electron intersubband transitions in the more readily available GaAs/Ga1 xAlxAs material system. It is found that the electric field induced anti-crossings of the states, derived from the first excited state with the ground states of a superlattice in the Stark-ladder regime, offers the possibility of a population inversion and gain at room temperature. Keywords— Terahertz, far-infrared, intersubband, quantum cascade lasers, superlattice, Stark-ladder
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